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XN05553|XN5553 Datasheet

  • XN05553|XN5553

  • Composite Device - Composite Transistors

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  • ETC

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Composite Transistors
XN05553
(XN5553)
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency amplification
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
鈥?/div>
Reduction of the mounting area and assembly cost by one half
4
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
5
6
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
3
2
1
0.30
+0.10
鈥?.05
鈻?/div>
Basic Part Number
鈥?/div>
2SD1149
脳
2
0.50
+0.10
鈥?.05
10藲
1.1
+0.2
鈥?.1
(0.65)
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
100
100
15
20
50
300
150
鈭?5
to
+150
Unit
V
V
V
mA
mA
mW
擄C
擄C
1: Collector (Tr1)
2: Emitter (Tr2)
3: Collector (Tr2)
EIAJ : SC-74
0 to 0.1
Marking Symbol: 4U
Internal Connection
4
Tr2
5
6
1.1
+0.3
鈥?.1
4: Base (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Tr1
3
2
1
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
h
FE
ratio
*
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
h
FE(Small
/Large)
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
CE
= 10 V, I
C
= 2 mA
V
CE
=
4 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
1 mA
V
CE
=
10 V, I
C
=
1 mA, G
V
=
80 dB
R
g
=
100 k鈩? Function
=
FLAT
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
Min
100
100
15
Typ
Max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
錚?/div>
0.1
1.0
400
0.50
0.99
0.05
80
150
0.20
2 000
Collector-emitter saturation voltage
Noise voltage
Transition frequency
V
CE(sat)
NV
f
T
mV
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00091BED
0.4
鹵0.2
5藲
V
1

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